PART |
Description |
Maker |
IRFI9530G IRFI9530GPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)
|
IRF[International Rectifier]
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RFP40N10 RF1S40N10SM RFG40N10 FN2431 |
CAP 180PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs 40A 100V 0.040 Ohm N-Channel Power MOSFETs From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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IRC503 IRC530 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package Power MOSFET(Vdss=100V/ Rds(on)=0.16ohm/ Id=14A) Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Power MOSFET(Vdss=100V Rds(on)=0.16ohm Id=14A) Hexfet? Power MOSFET
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IRF[International Rectifier]
|
IRF5NJ540 |
Avalanche Energy Ratings POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.052ohm, Id=22A*) SURFACE MOUNT (SMD-0.5)100V, N-CHANNEL 100V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package
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IRF[International Rectifier]
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IRFD120 |
Power MOSFET(Vdss=100V, Rds(on)=0.27ohm, Id=1.3A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.27ohm,身份证\u003d 1.3a标准 Power MOSFET(Vdss=100V/ Rds(on)=0.27ohm/ Id=1.3A) HEXFET? Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
|
International Rectifier, Corp. IRF[International Rectifier]
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IRF3710 IRF3710PBF |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条) Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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International Rectifier, Corp. IRF[International Rectifier]
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IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
|
IRF[International Rectifier]
|
IRLU120N IRLU120NPBF IRLR120N IRLR120NPBF IRLR120N |
Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.185ohm,身份证\u003d 10A条) 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
|
MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN Power 2A 100V Darlington PNP Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
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BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD |
Power MOSFET, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL SIPMOS Power Transistor Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply SIPMOS Power Transistor
|
Infineon Technologies AG
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TSD4M150 TSD4M150F TSD4M150V |
V(ds): 100V; V(dgr): 100V; V(gs): -20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits
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SGS Thomson Microelectronics STMicroelectronics ST Microelectronics
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